Mitsubishi, Uncategorized
RD07MUS2BT512J
Availability:
2545 in stock
SILICON RF POWER MOS FET RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RD07MUS2BT512J, Mitsubishi, SILICON RF POWER MOS FET RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
