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Showing 1–24 of 354 results
Electronic Component
BRIDGE RECTIFIER Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon
SEMIX 4 1S TRENCH IGBT MODULE Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel
SEMIX 13 TRENCH IGBT MODULE Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel
SEMIX 3S TRENCH IGBT MODULE Insulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel
Module: thyristor, opposing x2, 800V, 101A, T63, SEMITOP3, screw
SEMITOP 3 3-PHASE BRIDGE RECTIFIER PLUS BRAKE CHOPPER PLUS 3-PHASE BRIDGE INVERTER Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel
SEMITOP 2 MOSFET MODULE Power Field-Effect Transistor, 95A I(D), 100V, 0.0045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SEMITOP 2 ANTIPARALLEL THYRISTOR MODULE Silicon Controlled Rectifier, 134A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element
Module: thyristor, opposing, 1.6kV, 134A, T2, SEMITOP2, Ufmax: 1.85V
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER DIODE Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-214AC
3-PHASE BRIDGE RECTIFIER BRAKE CHOPPER Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel
SEMITOP 2 IGBT MODULE Insulated Gate Bipolar Transistor, 23A I(C), 1200V V(BR)CES, N-Channel
SEMITOP 1 IGBT MODULE Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
Module: thyristor, opposing, 800V, 29A, T1, SEMITOP1, Ufmax: 2.45V
Module: thyristor, opposing x3, 800V, 29A, T13, SEMITOP3, Ifsm: 320A
ANTIPARALLEL THYRISTOR MODULE Silicon Controlled Rectifier, 29A I(T)RMS, 800V V(DRM), 800V V(RRM), 4 Element
SEMITOP 3 MOSFET MODULE Power Field-Effect Transistor, 230A I(D), 100V, 0.0025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Module: diode-thyristor, 800V, 25A, T45, SEMITOP3, Ufmax: 1.8V
SEMITOP 2 IGBT MODULE Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel
Rectifier Diode, 1 Phase, 1 Element, 0.0003A, 21400V V(RRM)
