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DM2G150SH6NE

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High Power Rugged Type IGBT Module Insulated Gate Bipolar Transistor, 175A I(C), 600V V(BR)CES, N-Channel

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DM2G150SH6NE, Dawin, High Power Rugged Type IGBT Module Insulated Gate Bipolar Transistor, 175A I(C), 600V V(BR)CES, N-Channel

SKU: DM2G150SH6NE Categories: ,

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