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DM2G200SH12A

Availability:

7 in stock


High Power SPT+ and Lugged Type IGBT Module Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel

DM2G200SH12A, Dawin, High Power SPT+ and Lugged Type IGBT Module Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel

SKU: DM2G200SH12A Categories: ,

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